Mesuro's solutions are meeting the needs of both commercial and military applications for obtaining highly efficient, high power PAs. These designs will extend battery life, lower operating temperatures, improve reliability and offer smaller overall footprints.

At IMS, Mesuro is demonstrating high power measurements on a Cree Device in the Tektronix booth No.1033.

Active Source/Load Pull from UHF to Millimeter Wave
The MB series now offers all electronic active load pull capability from 200MHZ to 67GHz. While traditional passive tuning is physically limited by long wavelengths at UHF frequencies, Mesuro's electronic solution is not affected by wavelength. Additionally, active tuning for fundamental or harmonic frequencies up to 67GHz is now available.

"Our customers require active tuning for a wide range of applications," said Dr. Richard Emsley, CEO, Mesuro. "Whether it is for designing new wireless applications in the now available analog TV bands or measuring the harmonics of military PAs, active load pull enables engineers to optimize their design in less iterations."

Validating the Accuracy of Large Signal Models
The Mesuro MB150 150W solution, combined with waveform engineering techniques, enables high power PA designers to calibrate their large signal models for different classes of operation. For example, the system allows for quick evaluation of devices in Class F, inverse Class F and class J modes of operation for both ET and Doherty configurations.

"By comparing the measured impedances at the fundamental, 2 nd and 3 rd harmonics, as well as the voltage and current waveforms at the transistor current generator, we have been able to confirm the accuracy of our large signal models for our GaN HEMT transistor portfolio," said Ray Pengelly, Strategic Business Development Manager, Cree.

Achieving Record Efficiencies on Existing Technologies
The ability to achieve near theoretical-efficiencies requires accurate harmonic tuning. Mesuro's active tuning capability can be applied to both the source and load side of a device and allows for complete control of all in-band and out-of-band impedances. Mesuro, in association with TriQuint Semiconductor and Cardiff University, is presenting results at IMS showing a commercial GaAs pHEMT device achieving efficiencies in excess of 90% at P1dB in a class-B bias.

"By using Mesuro's waveform engineering techniques, our customers have a 100% success rate for improving their PA efficiencies and performance," added Dr. Emsley.